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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2531 DESCRIPTION *Low Collector Saturation Voltage: VCE(sat)= 1.0 (Max)@ IC= 2.5A *High Power Dissipation: PC= 25W@ TC= 25 APPLICATIONS *Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25 1 A 2 W PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 25 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD2531 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A 1.0 V VBE(on) Base-Emitter On Voltage IC= 0.5A ; VCE= 5V 1.0 V ICBO Collector Cutoff Current VCB= 60V ; IE= 0 100 A IEBO Emitter Cutoff Current VEB= 7V ; IC= 0 100 A hFE-1 DC Current Gain IC= 0.5A ; VCE= 5V 100 320 hFE-2 DC Current Gain IC= 3A ; VCE= 5V 20 fT Current-Gain--Bandwidth Product IC= 0.5A ; VCE= 5V 3 MHz COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 35 pF isc Websitewww.iscsemi.cn 2 |
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